- stacked CMOS
- багаторівнева КМОН-структура
English-Ukrainian dictionary of microelectronics. 2013.
English-Ukrainian dictionary of microelectronics. 2013.
stacked-gate complementary MOS — jungtinis MOP darinys su daugiapakopėmis užtūromis statusas T sritis radioelektronika atitikmenys: angl. stacked gate complementary MOS; stacked gate complementary MOS structure vok. komplementäre Stapelgate MOS, f; Stapelgate CMOS, f rus. КМОП… … Radioelektronikos terminų žodynas
stacked-gate complementary MOS structure — jungtinis MOP darinys su daugiapakopėmis užtūromis statusas T sritis radioelektronika atitikmenys: angl. stacked gate complementary MOS; stacked gate complementary MOS structure vok. komplementäre Stapelgate MOS, f; Stapelgate CMOS, f rus. КМОП… … Radioelektronikos terminų žodynas
Stapelgate-CMOS — jungtinis MOP darinys su daugiapakopėmis užtūromis statusas T sritis radioelektronika atitikmenys: angl. stacked gate complementary MOS; stacked gate complementary MOS structure vok. komplementäre Stapelgate MOS, f; Stapelgate CMOS, f rus. КМОП… … Radioelektronikos terminų žodynas
Foveon X3 sensor — The Foveon X3 sensor is a CMOS [El Gamal, A., [http://isl.stanford.edu/ abbas/group/papers and pub/iedm02.pdf Trends in CMOS Image Sensor Technology and Design] , Stanford University (2002 or later). Retrieved March 3, 2007.] image sensor for… … Wikipedia
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Multigate device — A multigate device or multiple gate field effect transistor(MuGFET) refers to a MOSFET which incorporates more than one gate into a single device. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces … Wikipedia